FCX1053AQTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 120V 1.5A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: MPT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.44 EUR |
| 2000+ | 0.39 EUR |
| 5000+ | 0.37 EUR |
| 10000+ | 0.35 EUR |
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Technische Details FCX1053AQTA Diodes Incorporated
Description: TRANS NPN 120V 1.5A MPT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: MPT3, Frequency - Transition: 280MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Qualification: AEC-Q101, Grade: Automotive, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor SOT89 T&R 1K
Bipolar Transistors - BJT Pwr Low Sat Transistor SOT89 T&R 1K
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH


