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FD1000R33HE3KBPSA1

FD1000R33HE3KBPSA1 Infineon Technologies


Infineon-FD1000R33HE3_K-DS-v03_01-en_de.pdf?fileId=db3a30431ce5fb52011d76007b9a7266 Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2684.25 EUR
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Technische Details FD1000R33HE3KBPSA1 Infineon Technologies

Description: IGBT MODULE 3300V 1000A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Brake Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1000 A, Voltage - Collector Emitter Breakdown (Max): 3300 V, Power - Max: 11500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 190 nF @ 25 V.

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FD1000R33HE3KBPSA1 FD1000R33HE3KBPSA1 Hersteller : Infineon Technologies infineon-fd1000r33he3_k-datasheet-v03_02-en.pdf Trench and Field Stop IGBT Module
Produkt ist nicht verfügbar
FD1000R33HE3KBPSA1 FD1000R33HE3KBPSA1 Hersteller : Infineon Technologies infineon-fd1000r33he3_k-datasheet-v03_02-en.pdf Trench and Field Stop IGBT Module
Produkt ist nicht verfügbar
FD1000R33HE3KBPSA1 Hersteller : INFINEON TECHNOLOGIES FD1000R33HE3K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Mechanical mounting: screw
Electrical mounting: screw
Case: AG-IHVB190
Max. off-state voltage: 3.3kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Application: frequency changer; Inverter
Power dissipation: 11.5kW
Type of module: IGBT
Topology: buck-boost chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FD1000R33HE3KBPSA1 Hersteller : INFINEON TECHNOLOGIES FD1000R33HE3K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Mechanical mounting: screw
Electrical mounting: screw
Case: AG-IHVB190
Max. off-state voltage: 3.3kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Application: frequency changer; Inverter
Power dissipation: 11.5kW
Type of module: IGBT
Topology: buck-boost chopper
Produkt ist nicht verfügbar