Technische Details FD200R12KE3PHOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 200A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote FD200R12KE3PHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
FD200R12KE3PHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 200A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
FD200R12KE3PHOSA1 | Infineon Technologies |
IGBTs 1200 V, 200 A chopper IGBT module |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FD200R12KE3PHOSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FD200R12KE3PHOSA1 |
![]() |
Hersteller: Infineon Technologies
IGBTs 1200 V, 200 A chopper IGBT module
IGBTs 1200 V, 200 A chopper IGBT module
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen
Stück im Wert von UAH




