FD250R65KE3KNOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 6500V 250A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 69 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3038.85 EUR |
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Technische Details FD250R65KE3KNOSA1 Infineon Technologies
Description: IGBT MOD 6500V 250A 4800W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -50°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 6500 V, Power - Max: 4800 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 69 nF @ 25 V.
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Description: IGBT MOD 6500V 250A 4800W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -50°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 6500 V Power - Max: 4800 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 69 nF @ 25 V |
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