FD650R17IE4BOSA2 Infineon Technologies

Description: IGBT MOD 1700V 930A 4150W, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 4150 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 930 A, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, Operating Temperature: -40°C ~ 150°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.