Technische Details FD650R17IE4BOSA2 Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 930 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 4150 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.
Weitere Produktangebote FD650R17IE4BOSA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FD650R17IE4BOSA2 | Hersteller : Infineon Technologies |
 IGBT Power Module |
Produkt ist nicht verfügbar |
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FD650R17IE4BOSA2 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1700V 930A 4150W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 930 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 4150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
Produkt ist nicht verfügbar |
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| FD650R17IE4BOSA2 | Hersteller : Infineon Technologies |
IGBT Modules PP IHM I XHP 1 7KV |
Produkt ist nicht verfügbar |