FDA16N50-F109 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.93 EUR |
30+ | 4.87 EUR |
120+ | 4.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDA16N50-F109 onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V.
Weitere Produktangebote FDA16N50-F109 nach Preis ab 3.77 EUR bis 7.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDA16N50-F109 | Hersteller : onsemi / Fairchild | MOSFET 500V 16.5A NCH |
auf Bestellung 450 Stücke: Lieferzeit 196-210 Tag (e) |
|
|||||||||||||||||
FDA16N50-F109 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDA16N50-F109 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDA16N50-F109 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
FDA16N50-F109 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |