| Anzahl | Preis |
|---|---|
| 1+ | 5.84 EUR |
| 10+ | 3.2 EUR |
| 120+ | 2.66 EUR |
| 510+ | 2.45 EUR |
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Technische Details FDA16N50-F109 onsemi / Fairchild
Description: MOSFET N-CH 500V 16.5A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V.
Weitere Produktangebote FDA16N50-F109 nach Preis ab 2.57 EUR bis 6.92 EUR
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FDA16N50-F109 | onsemi |
 Description: MOSFET N-CH 500V 16.5A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA16N50-F109 | onsemi |
MOSFETs 500V 16.5A NCH |
auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDA16N50-F109 | ONN |
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auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDA16N50-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.25 EUR |
| 30+ | 3.44 EUR |
| 120+ | 2.83 EUR |
| FDA16N50-F109 |
|
Hersteller: onsemi
MOSFETs 500V 16.5A NCH
MOSFETs 500V 16.5A NCH
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.92 EUR |
| 10+ | 4.51 EUR |
| 120+ | 3.52 EUR |
| 510+ | 2.96 EUR |
| 1020+ | 2.75 EUR |
| 2520+ | 2.57 EUR |
| FDA16N50-F109 |
|
Hersteller: ONN
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH