
FDA16N50LDTU ON Semiconductor
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
210+ | 2.64 EUR |
500+ | 2.44 EUR |
1000+ | 2.21 EUR |
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Technische Details FDA16N50LDTU ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN (L-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V.
Weitere Produktangebote FDA16N50LDTU nach Preis ab 2.65 EUR bis 5.07 EUR
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FDA16N50LDTU | Hersteller : onsemi / Fairchild |
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auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA16N50LDTU | Hersteller : Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN (L-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
auf Bestellung 28520 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA16N50LDTU | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDA16N50LDTU | Hersteller : ONSEMI |
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Produkt ist nicht verfügbar |
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FDA16N50LDTU | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN (L-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
Produkt ist nicht verfügbar |