FDA33N25 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 250V 33A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.38 EUR |
| 30+ | 4.26 EUR |
| 120+ | 3.65 EUR |
| 510+ | 3.25 EUR |
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Technische Details FDA33N25 onsemi
Description: MOSFET N-CH 250V 33A TO3PN, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 245W (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote FDA33N25 nach Preis ab 4.4 EUR bis 6.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FDA33N25 | onsemi / Fairchild |
MOSFET 250V N-Channel |
auf Bestellung 1324 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDA33N25 |
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Hersteller: onsemi / Fairchild
MOSFET 250V N-Channel
MOSFET 250V N-Channel
auf Bestellung 1324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.47 EUR |
| 10+ | 5.82 EUR |
| 100+ | 4.41 EUR |
| 250+ | 4.4 EUR |