Produkte > ONSEMI > FDA33N25
FDA33N25

FDA33N25 onsemi

fda33n25-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 250V 33A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 535 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
30+3.58 EUR
120+3.07 EUR
510+2.73 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDA33N25 onsemi

Description: MOSFET N-CH 250V 33A TO3PN, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 245W (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.

Weitere Produktangebote FDA33N25 nach Preis ab 3.7 EUR bis 5.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDA33N25 FDA33N25 Hersteller : onsemi / Fairchild FDA33N25_D-1806176.pdf MOSFET 250V N-Channel
auf Bestellung 1324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.44 EUR
10+4.89 EUR
100+3.71 EUR
250+3.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH