auf Bestellung 1418 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 7.98 EUR |
| 10+ | 7.18 EUR |
| 100+ | 5.9 EUR |
| 450+ | 5.62 EUR |
| 2700+ | 5.02 EUR |
| 5400+ | 4.84 EUR |
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Technische Details FDA70N20 onsemi / Fairchild
Description: MOSFET N-CH 200V 70A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V.
Weitere Produktangebote FDA70N20
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDA70N20 | Hersteller : FAIRCHILD |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDA70N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 280A; 417W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 280A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 35mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDA70N20 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 70A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FDA70N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 70A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDA70N20 | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 7 Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDA70N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 280A; 417W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 280A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 35mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |