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FDA8440

FDA8440 onsemi

FAIRS46987-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: MOSFET N-CH 40V 30A/100A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
auf Bestellung 2091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
70+7.12 EUR
Mindestbestellmenge: 70
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Technische Details FDA8440 onsemi

Description: MOSFET N-CH 40V 30A/100A TO3PN, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V.

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FDA8440 FDA8440 Hersteller : ON Semiconductor / Fairchild FDA8440-1122475.pdf MOSFET 40V 100A 2.1mOhm N-Chan Power Trench
auf Bestellung 386 Stücke:
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FDA8440 FDA8440 Hersteller : ON Semiconductor 4264803635464620fda8440-d.pdf Trans MOSFET N-CH 40V 30A 3-Pin(3+Tab) TO-3P Tube
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FDA8440 FDA8440 Hersteller : onsemi FAIRS46987-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 30A/100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Produkt ist nicht verfügbar