FDB0250N807L onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
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Technische Details FDB0250N807L onsemi
Description: MOSFET N-CH 80V 240A TO263-7, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V.
Weitere Produktangebote FDB0250N807L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDB0250N807L | ON Semiconductor |
|
auf Bestellung 760 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB0250N807L |
|
Hersteller: ON Semiconductor
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)