FDB3672-F085 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.2A/44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET N-CH 100V 7.2A/44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.49 EUR |
100+ | 4.05 EUR |
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Technische Details FDB3672-F085 onsemi
Description: MOSFET N-CH 100V 7.2A/44A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V.
Weitere Produktangebote FDB3672-F085 nach Preis ab 3.87 EUR bis 6.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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FDB3672-F085 | Hersteller : onsemi / Fairchild | MOSFET 100V 44A N-Channel PowerTrench |
auf Bestellung 1157 Stücke: Lieferzeit 14-28 Tag (e) |
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FDB3672_F085 | Hersteller : Fairchild Semiconductor | Description: MOSFET N-CH 100V 44A D2PAK |
auf Bestellung 10213200 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672_F085 | Hersteller : Fairchild Semiconductor | Description: MOSFET N-CH 100V 44A D2PAK |
auf Bestellung 1021 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672_F085 | Hersteller : Fairchild Semiconductor | Description: MOSFET N-CH 100V 44A D2PAK |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 7.2A/44A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
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