FDB3672-F085 onsemi / Fairchild
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.36 EUR |
| 10+ | 3.94 EUR |
| 25+ | 3.73 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.62 EUR |
Produktrezensionen
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Technische Details FDB3672-F085 onsemi / Fairchild
Description: MOSFET N-CH 100V 7.2A/44A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDB3672-F085 nach Preis ab 2.27 EUR bis 5.00 EUR
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FDB3672-F085 | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 7.2A/44A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 44A D2PAK |
auf Bestellung 10213200 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 44A D2PAK |
auf Bestellung 1021 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 44A D2PAK |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3672-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 7.2A/44A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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