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FDB3672-F085

FDB3672-F085 onsemi / Fairchild


FDB3672_F085_D-1806539.pdf Hersteller: onsemi / Fairchild
MOSFET 100V 44A N-Channel PowerTrench
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10+3.94 EUR
25+3.73 EUR
100+3.17 EUR
500+2.62 EUR
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Technische Details FDB3672-F085 onsemi / Fairchild

Description: MOSFET N-CH 100V 7.2A/44A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote FDB3672-F085 nach Preis ab 2.27 EUR bis 5.00 EUR

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FDB3672-F085 FDB3672-F085 Hersteller : onsemi fdb3672_f085-d.pdf Description: MOSFET N-CH 100V 7.2A/44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.00 EUR
10+3.26 EUR
100+2.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDB3672_F085 FDB3672_F085 Hersteller : Fairchild Semiconductor FDB3672_F085.pdf Description: MOSFET N-CH 100V 44A D2PAK
auf Bestellung 10213200 Stücke:
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FDB3672_F085 FDB3672_F085 Hersteller : Fairchild Semiconductor FDB3672_F085.pdf Description: MOSFET N-CH 100V 44A D2PAK
auf Bestellung 1021 Stücke:
Lieferzeit 10-14 Tag (e)
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FDB3672_F085 FDB3672_F085 Hersteller : Fairchild Semiconductor FDB3672_F085.pdf Description: MOSFET N-CH 100V 44A D2PAK
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDB3672-F085 FDB3672-F085 Hersteller : onsemi fdb3672_f085-d.pdf Description: MOSFET N-CH 100V 7.2A/44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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