FDB8453LZ ON Semiconductor
| Anzahl | Preis |
|---|---|
| 355+ | 1.51 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.16 EUR |
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Technische Details FDB8453LZ ON Semiconductor
Description: MOSFET N-CH 40V 16.1A/50A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 17.6A, 10V, Power Dissipation (Max): 3.1W (Ta), 66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 20 V.
Weitere Produktangebote FDB8453LZ nach Preis ab 6.24 EUR bis 6.24 EUR
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FDB8453LZ | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 40V 16.1A/50A TO263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 17.6A, 10V Power Dissipation (Max): 3.1W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 20 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB8453LZ | Hersteller : onsemi |
Description: MOSFET N-CH 40V 16.1A/50A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 17.6A, 10V Power Dissipation (Max): 3.1W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDB8453LZ | Hersteller : onsemi |
MOSFETs 40V N-CHANNEL |
Produkt ist nicht verfügbar |