FDB8453LZ Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 40V 16.1A/50A TO263
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 20 V
auf Bestellung 1734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 1.17 EUR |
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Technische Details FDB8453LZ Fairchild Semiconductor
Description: MOSFET N-CH 40V 16.1A/50A TO263, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 17.6A, 10V, Power Dissipation (Max): 3.1W (Ta), 66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D2PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 20 V.