FDB8870-F085 ON Semiconductor / Fairchild
auf Bestellung 1990 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FDB8870-F085 ON Semiconductor / Fairchild
Description: MOSFET N-CH 30V 23A/160A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D2PAK (TO-263), Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V.
Weitere Produktangebote FDB8870-F085 nach Preis ab 2.55 EUR bis 2.55 EUR
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FDB8870-F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 30V 23A/160A D2PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V |
auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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