| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.59 EUR |
| 10+ | 6.41 EUR |
| 100+ | 5.7 EUR |
| 500+ | 5.4 EUR |
| 800+ | 4.9 EUR |
| 2400+ | 4.66 EUR |
| 4800+ | 4.5 EUR |
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Technische Details FDB9403-F085 onsemi
Description: MOSFET N-CH 40V 110A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V, Power Dissipation (Max): 333W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FDB9403-F085 nach Preis ab 9.76 EUR bis 9.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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FDB9403-F085 | onsemi |
 Description: MOSFET N-CH 40V 110A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB9403-F085 | ON Semiconductor |
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auf Bestellung 1555 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB9403-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 110A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.76 EUR |
| FDB9403-F085 |
|
Hersteller: ON Semiconductor
auf Bestellung 1555 Stücke:
Lieferzeit 21-28 Tag (e)