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FDBL0065N40

FDBL0065N40 onsemi

fdbl0065n40-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.24 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDBL0065N40 onsemi

Description: MOSFET N-CH 40V 300A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V, Power Dissipation (Max): 429W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V.

Weitere Produktangebote FDBL0065N40 nach Preis ab 3.34 EUR bis 8.5 EUR

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FDBL0065N40 FDBL0065N40 Hersteller : onsemi FDBL0065N40-D.pdf MOSFETs 40 V N-Channel PowerTrench MOSFET
auf Bestellung 2305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.16 EUR
10+5.67 EUR
100+3.7 EUR
500+3.64 EUR
2000+3.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0065N40 FDBL0065N40 Hersteller : onsemi fdbl0065n40-d.pdf Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 2993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.5 EUR
10+5.68 EUR
100+4.07 EUR
500+3.96 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0065N40 FDBL0065N40 Hersteller : ON Semiconductor fdbl0065n40jp-d.pdf Trans MOSFET N-CH 40V 300A 9-Pin(8+Tab) HPSOF EP T/R
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FDBL0065N40 Hersteller : ONSEMI fdbl0065n40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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