FDBL0090N40 onsemi / Fairchild
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.06 EUR |
| 10+ | 6.55 EUR |
| 100+ | 4.72 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.91 EUR |
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Technische Details FDBL0090N40 onsemi / Fairchild
Description: MOSFET N-CH 40V 240A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V, Power Dissipation (Max): 357W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote FDBL0090N40 nach Preis ab 8.18 EUR bis 9.10 EUR
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FDBL0090N40 | Hersteller : onsemi |
 Description: MOSFET N-CH 40V 240A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0090N40 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 240A 9-Pin(8+Tab) HPSOF EP T/R |
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| FDBL0090N40 | Hersteller : ONSEMI |
FDBL0090N40 SMD N channel transistors |
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FDBL0090N40 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 240A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
Produkt ist nicht verfügbar |