FDC2512-P onsemi

Description: MOSFET N-CH 150V SUPERSOT6, Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).