Technische Details FDC6506P ON Semiconductor
Description: MOSFET 2P-CH 30V 1.8A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Obsolete.
Weitere Produktangebote FDC6506P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDC6506P | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 30V 1.8A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
||
 |
FDC6506P | Hersteller : onsemi |
Description: MOSFET 2P-CH 30V 1.8A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete |
Produkt ist nicht verfügbar |
|
|
|
FDC6506P | Hersteller : onsemi |
Description: MOSFET 2P-CH 30V 1.8A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete |
Produkt ist nicht verfügbar |
|
 |
FDC6506P | Hersteller : onsemi / Fairchild |
MOSFET SSOT-6 P-CH -30V |
Produkt ist nicht verfügbar |