FDD14AN06LA0_F085 Fairchild Semiconductor
auf Bestellung 189012500 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details FDD14AN06LA0_F085 Fairchild Semiconductor
Description: MOSFET N-CH 60V 9.5A/50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FDD14AN06LA0_F085
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FDD14AN06LA0_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 9.5A DPAK-3 |
auf Bestellung 1890 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD14AN06LA0-F085 | Hersteller : onsemi / Fairchild |
MOSFET 60V N-CHAN PwrTrench |
auf Bestellung 1014 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD14AN06LA0_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 60V 9.5A DPAK-3 |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD14AN06LA0-F085 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 50A Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 125W Polarisation: unipolar Gate charge: 32nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 33mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FDD14AN06LA0-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9.5A/50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDD14AN06LA0-F085 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 50A Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 125W Polarisation: unipolar Gate charge: 32nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 33mΩ |
Produkt ist nicht verfügbar |