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FDD14AN06LA0_F085

FDD14AN06LA0_F085 Fairchild Semiconductor


FDD14AN06L_F085.pdf Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 9.5A DPAK-3
auf Bestellung 189012500 Stücke:

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Technische Details FDD14AN06LA0_F085 Fairchild Semiconductor

Description: MOSFET N-CH 60V 9.5A/50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V, Qualification: AEC-Q101.

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FDD14AN06LA0_F085 FDD14AN06LA0_F085 Hersteller : Fairchild Semiconductor FDD14AN06L_F085.pdf Description: MOSFET N-CH 60V 9.5A DPAK-3
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDD14AN06LA0-F085 FDD14AN06LA0-F085 Hersteller : onsemi / Fairchild FDD14AN06L_F085_D-2312163.pdf MOSFET 60V N-CHAN PwrTrench
auf Bestellung 1014 Stücke:
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FDD14AN06LA0_F085 FDD14AN06LA0_F085 Hersteller : Fairchild Semiconductor FDD14AN06L_F085.pdf Description: MOSFET N-CH 60V 9.5A DPAK-3
auf Bestellung 12500 Stücke:
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FDD14AN06LA0-F085 FDD14AN06LA0-F085 Hersteller : ONSEMI fdd14an06l_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 50A
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 32nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD14AN06LA0-F085 FDD14AN06LA0-F085 Hersteller : onsemi fdd14an06l_f085-d.pdf Description: MOSFET N-CH 60V 9.5A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD14AN06LA0-F085 FDD14AN06LA0-F085 Hersteller : ONSEMI fdd14an06l_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 50A
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 32nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH