FDD2612 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 307+ | 2.15 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.73 EUR |
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Technische Details FDD2612 ON Semiconductor
Description: MOSFET N-CH 200V 4.9A TO252, Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 42W (Ta), Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDD2612 nach Preis ab 1.9 EUR bis 2.19 EUR
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FDD2612 | ON Semiconductor |
 Trans MOSFET N-CH 200V 4.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD2612 | Fairchild Semiconductor |
Description: MOSFET N-CH 200V 4.9A TO252 Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 42W (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
auf Bestellung 2261 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD2612 | fairchild |
to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDD2612 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 4.9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 4.9A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 307+ | 2.15 EUR |
| 500+ | 1.9 EUR |
| FDD2612 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 4.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 42W (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 200V 4.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 42W (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2261 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 245+ | 2.19 EUR |
| FDD2612 |
|
Hersteller: fairchild
to-252/d-pak
to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)