FDD3860 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.84 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD3860 onsemi
Description: MOSFET N-CH 100V 6.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V, Power Dissipation (Max): 3.1W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V.
Weitere Produktangebote FDD3860 nach Preis ab 0.9 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDD3860 | onsemi / Fairchild |
MOSFETs 100V N-Channel Power Trench |
auf Bestellung 38285 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD3860 | onsemi |
Description: MOSFET N-CH 100V 6.2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V |
auf Bestellung 22656 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD3860 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FDD3860 | ONSEMI |
Description: ONSEMI - FDD3860 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
|
| FDD3860 |
|
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel Power Trench
MOSFETs 100V N-Channel Power Trench
auf Bestellung 38285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 1.26 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.95 EUR |
| 2500+ | 0.9 EUR |
| FDD3860 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
auf Bestellung 22656 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 12+ | 1.77 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.93 EUR |
| FDD3860 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| FDD3860 |
|
Hersteller: ONSEMI
Description: ONSEMI - FDD3860 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FDD3860 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 717+ | 1.13 EUR |