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FDD5810 fairchild

79dbfaae8bae6dba7af00626a2e2d2c1.pdf
Hersteller: fairchild
07+ to-252/d-pak
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Technische Details FDD5810 fairchild

Description: MOSFET N-CH 60V 7.4A/37A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.

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FDD5810 FDD5810 onsemi 79dbfaae8bae6dba7af00626a2e2d2c1.pdf Description: MOSFET N-CH 60V 7.4A/37A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDD5810 FDD5810 UMW 79dbfaae8bae6dba7af00626a2e2d2c1.pdf Description: MOSFET N-CH 60V 7.4A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD5810 FDD5810 UMW 79dbfaae8bae6dba7af00626a2e2d2c1.pdf Description: MOSFET N-CH 60V 7.4A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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FDD5810 FDD5810 ON Semiconductor / Fairchild fairchild semiconductor_fdd8447l_f085-1191236.pdf MOSFET LOW VOLTAGE
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FDD5810 79dbfaae8bae6dba7af00626a2e2d2c1.pdf
FDD5810
Hersteller: onsemi
Description: MOSFET N-CH 60V 7.4A/37A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD5810 79dbfaae8bae6dba7af00626a2e2d2c1.pdf
FDD5810
Hersteller: UMW
Description: MOSFET N-CH 60V 7.4A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD5810 79dbfaae8bae6dba7af00626a2e2d2c1.pdf
FDD5810
Hersteller: UMW
Description: MOSFET N-CH 60V 7.4A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD5810 fairchild semiconductor_fdd8447l_f085-1191236.pdf
FDD5810
Hersteller: ON Semiconductor / Fairchild
MOSFET LOW VOLTAGE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH