FDD6N25TM Fairchild Semiconductor

Description: MOSFET N-CH 250V 4.4A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 50W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).