FDD8445-F085P onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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Technische Details FDD8445-F085P onsemi
Description: MOSFET N-CH 40V 50A TO252, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 79W (Ta), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V.
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FDD8445-F085P | ON Semiconductor |
MOSFET 40V,35A,9.0 OHM, NCH DPAK,PwrTRENCHmosfet |
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| FDD8445-F085P |
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Hersteller: ON Semiconductor
MOSFET 40V,35A,9.0 OHM, NCH DPAK,PwrTRENCHmosfet
MOSFET 40V,35A,9.0 OHM, NCH DPAK,PwrTRENCHmosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


