FDD86113LZ UMW
| Anzahl | Preis |
|---|---|
| 2500+ | 0.57 EUR |
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Technische Details FDD86113LZ UMW
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V, Power Dissipation (Max): 3.1W (Ta), 29W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V.
Weitere Produktangebote FDD86113LZ nach Preis ab 0.71 EUR bis 2.92 EUR
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FDD86113LZ | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 4.2A/5.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86113LZ | Hersteller : onsemi / Fairchild |
MOSFETs 100/20V PT5 N-Chan PowerTrench MOSFET |
auf Bestellung 5489 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86113LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
auf Bestellung 13246 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD86113LZ | Hersteller : ONS/FAI |
MOSFET N-CH 100V 4.2A/5.5A DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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FDD86113LZ | Hersteller : UMW |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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| FDD86113LZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252 Polarisation: unipolar Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Mounting: SMD Gate charge: 6nC On-state resistance: 0.104Ω Power dissipation: 3.1W Drain current: 4.2A Drain-source voltage: 100V |
Produkt ist nicht verfügbar |