FDD86380-F085 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.88 EUR |
| 5000+ | 0.82 EUR |
| 7500+ | 0.81 EUR |
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Technische Details FDD86380-F085 onsemi
Description: MOSFET N-CH 80V 50A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Qualification: AEC-Q101, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 75W (Tj), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDD86380-F085 nach Preis ab 0.81 EUR bis 3.2 EUR
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FDD86380-F085 | onsemi / Fairchild |
MOSFETs MV780/20V1000AMOSFET N-channelPowerTrench |
auf Bestellung 2236 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 9857 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD86380-F085 |
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Hersteller: onsemi / Fairchild
MOSFETs MV780/20V1000AMOSFET N-channelPowerTrench
MOSFETs MV780/20V1000AMOSFET N-channelPowerTrench
auf Bestellung 2236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.14 EUR |
| 10+ | 2 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.84 EUR |
| 5000+ | 0.81 EUR |
| FDD86380-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 9857 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |