
FDD86381-F085 ON Semiconductor
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2500+ | 0.62 EUR |
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Technische Details FDD86381-F085 ON Semiconductor
Description: MOSFET N-CH 80V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V, Power Dissipation (Max): 48.4W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDD86381-F085 nach Preis ab 0.68 EUR bis 1.94 EUR
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FDD86381-F085 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V Power Dissipation (Max): 48.4W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86381-F085 | Hersteller : ON Semiconductor |
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auf Bestellung 8662 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86381-F085 | Hersteller : onsemi / Fairchild |
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auf Bestellung 7454 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86381-F085 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V Power Dissipation (Max): 48.4W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 28030 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86381-F085 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDD86381-F085 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDD86381-F085 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDD86381-F085 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 25A; 48.4W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Power dissipation: 48.4W Case: DPAK Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FDD86381-F085 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 25A; 48.4W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Power dissipation: 48.4W Case: DPAK Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |