FDFM2P110 ON Semiconductor / Fairchild
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details FDFM2P110 ON Semiconductor / Fairchild
Description: MOSFET P-CH 20V 3.5A MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 3.5A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: MicroFET 3x3mm, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V.
Weitere Produktangebote FDFM2P110
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| FDFM2P110 | Hersteller : FAIRCHIL |
 QFN6 0905+ |
auf Bestellung 56074 Stücke: Lieferzeit 21-28 Tag (e) |
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FDFM2P110 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDFM2P110 | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.5A MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 3.5A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: MicroFET 3x3mm Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
Produkt ist nicht verfügbar |