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FDFMA2P853T

FDFMA2P853T Fairchild Semiconductor

FAIRS27483-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 20V 3A MICROFET
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
auf Bestellung 13740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1110+0.46 EUR
Mindestbestellmenge: 1110
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDFMA2P853T Fairchild Semiconductor

Description: MOSFET P-CH 20V 3A MICROFET, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 7-SOIC, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V.

Weitere Produktangebote FDFMA2P853T nach Preis ab 0.67 EUR bis 1.34 EUR

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FDFMA2P853T FDFMA2P853T Hersteller : onsemi / Fairchild fairchild_semiconductor_fdfma2p853t-1191175.pdf MOSFET MOSFET/Schottky -20V Int. PCh PowerTrenc
auf Bestellung 1654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.34 EUR
10+1.16 EUR
100+0.81 EUR
500+0.67 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDFMA2P853T FDFMA2P853T Hersteller : onsemi FDFMA2P853T.pdf Description: MOSFET P-CH 20V 3A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 7-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH