FDFMA3P029Z Fairchild Semiconductor

Description: MOSFET P-CH 30V 3.3A 6MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 6-MLP (2x2), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Bulk.