Technische Details FDFMA3P029Z ON Semiconductor
Description: MOSFET P-CH 30V 3.3A 6MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 6-MLP (2x2), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Bulk.
Weitere Produktangebote FDFMA3P029Z nach Preis ab 0.49 EUR bis 0.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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FDFMA3P029Z | ON Semiconductor |
 Trans MOSFET P-CH 30V 3.3A 6-Pin MLP EP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDFMA3P029Z | Fairchild Semiconductor |
Description: MOSFET P-CH 30V 3.3A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: 6-MLP (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Bulk |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
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FDFMA3P029Z | ON Semiconductor / Fairchild |
MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET |
auf Bestellung 1530 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDFMA3P029Z |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 3.3A 6-Pin MLP EP T/R
Trans MOSFET P-CH 30V 3.3A 6-Pin MLP EP T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1358+ | 0.49 EUR |
| FDFMA3P029Z |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 30V 3.3A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 6-MLP (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Bulk
Description: MOSFET P-CH 30V 3.3A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 6-MLP (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Bulk
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1110+ | 0.54 EUR |
| FDFMA3P029Z |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET
MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)