FDFMA3P029Z ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1358+ | 0.5 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1358 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDFMA3P029Z ON Semiconductor
Description: MOSFET P-CH 30V 3.3A 6MICROFET, Packaging: Bulk, Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-MLP (2x2), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V.
Weitere Produktangebote FDFMA3P029Z nach Preis ab 0.5 EUR bis 0.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
|
|
FDFMA3P029Z | ON Semiconductor |
 Trans MOSFET P-CH 30V 3.3A 6-Pin MLP EP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||
 |
FDFMA3P029Z | Fairchild Semiconductor |
Description: MOSFET P-CH 30V 3.3A 6MICROFET Packaging: Bulk Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MLP (2x2) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
 |
FDFMA3P029Z | ON Semiconductor / Fairchild |
MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET |
auf Bestellung 1530 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDFMA3P029Z |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 3.3A 6-Pin MLP EP T/R
Trans MOSFET P-CH 30V 3.3A 6-Pin MLP EP T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1358+ | 0.5 EUR |
| FDFMA3P029Z |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 30V 3.3A 6MICROFET
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MLP (2x2)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Description: MOSFET P-CH 30V 3.3A 6MICROFET
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MLP (2x2)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1110+ | 0.54 EUR |
| FDFMA3P029Z |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET
MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)