FDG361N Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 100V 600MA SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 600mA, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 50 V
auf Bestellung 98273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 683+ | 0.73 EUR |
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Technische Details FDG361N Fairchild Semiconductor
Description: MOSFET N-CH 100V 600MA SC88, Packaging: Bulk, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 600mA, 10V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 50 V.
Weitere Produktangebote FDG361N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDG361N | Hersteller : ONSEMI |
Description: ONSEMI - FDG361N - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 98273 Stücke: Lieferzeit 14-21 Tag (e) |