FDG6301N-F085 ON Semiconductor / Fairchild
auf Bestellung 251908 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details FDG6301N-F085 ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 25V 0.22A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDG6301N-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FDG6301N_F085 |
auf Bestellung 8800 Stücke: Lieferzeit 18-25 Tag (e) |
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FDG6301N-F085 | Hersteller : ON Semiconductor |
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| FDG6301N-F085 | Hersteller : ONSEMI |
FDG6301N-F085 Multi channel transistors |
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FDG6301N-F085 | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 0.22A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |