FDG6321C ON Semiconductor
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
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Technische Details FDG6321C ON Semiconductor
Description: MOSFET N/P-CH 25V 0.5A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-88 (SC-70-6).
Weitere Produktangebote FDG6321C nach Preis ab 0.22 EUR bis 0.98 EUR
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FDG6321C | Hersteller : ON Semiconductor |
 Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-88 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6321C | Hersteller : onsemi |
Description: MOSFET N/P-CH 25V 0.5A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) |
auf Bestellung 14600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDG6321C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 0.5/-0.41A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8/±8V On-state resistance: 720/1800mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.3/1.5nC Technology: PowerTrench® Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2588 Stücke: Lieferzeit 7-14 Tag (e) |
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FDG6321C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 0.5/-0.41A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8/±8V On-state resistance: 720/1800mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.3/1.5nC Technology: PowerTrench® Kind of transistor: complementary pair |
auf Bestellung 2588 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6321C | Hersteller : onsemi |
Description: MOSFET N/P-CH 25V 0.5A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) |
auf Bestellung 14740 Stücke: Lieferzeit 10-14 Tag (e) |
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FDG6321C | Hersteller : onsemi / Fairchild |
MOSFETs SC70-6 COMP N-P-CH |
auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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FDG6321C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-88 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6321C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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FDG6321C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |