| Anzahl | Preis |
|---|---|
| 1+ | 14.48 EUR |
| 10+ | 12.41 EUR |
| 25+ | 11.26 EUR |
| 100+ | 10.35 EUR |
| 250+ | 9.43 EUR |
| 450+ | 9.38 EUR |
| 900+ | 8.98 EUR |
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Technische Details FDH50N50-F133 onsemi / Fairchild
Description: MOSFET N-CH 500V 48A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V.
Weitere Produktangebote FDH50N50-F133
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDH50N50_F133 | Fairchild Semiconductor |
 Description: MOSFET N-CH 500V 48A TO247Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDH50N50-F133 | onsemi |
Description: MOSFET N-CH 500V 48A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDH50N50_F133 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 48A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: MOSFET N-CH 500V 48A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH50N50-F133 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Description: MOSFET N-CH 500V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH