FDMA008P20LZ onsemi

Description: SINGLE P-CHANNEL POWERTRENCH MOS, Input Capacitance (Ciss) (Max) @ Vds: 4383 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 2.4W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: P-Channel, Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Bulk, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).