| Anzahl | Preis |
|---|---|
| 2+ | 1.65 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 3000+ | 0.45 EUR |
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Technische Details FDMA1024NZ onsemi / Fairchild
Description: MOSFET 2N-CH 20V 5A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Part Status: Active.
Weitere Produktangebote FDMA1024NZ nach Preis ab 0.5 EUR bis 1.74 EUR
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FDMA1024NZ | onsemi |
 Description: MOSFET 2N-CH 20V 5A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active |
auf Bestellung 1944 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA1024NZ | onsemi |
Description: MOSFET 2N-CH 20V 5A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMA1024NZ |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 5A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 5A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
auf Bestellung 1944 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 17+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| FDMA1024NZ |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 5A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 5A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)