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FDMC007N08LC

FDMC007N08LC onsemi

fdmc007n08lc-d.pdf Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 66A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.55 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMC007N08LC onsemi

Description: MOSFET N-CHANNEL 80V 66A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 21A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 120µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 40 V.

Weitere Produktangebote FDMC007N08LC nach Preis ab 1.44 EUR bis 4.91 EUR

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FDMC007N08LC FDMC007N08LC Hersteller : onsemi / Fairchild fdmc007n08lc-d.pdf MOSFETs 80V/20V N-Channel PTNG MOSFET
auf Bestellung 43777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+2.82 EUR
100+1.74 EUR
500+1.61 EUR
1000+1.57 EUR
3000+1.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMC007N08LC FDMC007N08LC Hersteller : onsemi fdmc007n08lc-d.pdf Description: MOSFET N-CHANNEL 80V 66A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 40 V
auf Bestellung 8059 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.91 EUR
10+3.19 EUR
100+2.2 EUR
500+1.78 EUR
1000+1.65 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC007N08LC FDMC007N08LC Hersteller : ON Semiconductor 3663091888733254fdmc007n08lc.pdf Trans MOSFET N-CH 80V 14A 8-Pin PQFN EP T/R
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