FDMC007N30D onsemi / Fairchild
auf Bestellung 1578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.35 EUR |
| 100+ | 1 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.72 EUR |
| 3000+ | 0.63 EUR |
| 6000+ | 0.61 EUR |
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Technische Details FDMC007N30D onsemi / Fairchild
Description: MOSFET 2N-CH 30V 46A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 46A, Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Weitere Produktangebote FDMC007N30D nach Preis ab 0.73 EUR bis 2.43 EUR
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FDMC007N30D | Hersteller : onsemi |
 Description: MOSFET 2N-CH 30V 46A 8PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 5283 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC007N30D | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 10A/16A 8-Pin WDFN EP T/R |
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FDMC007N30D | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 10A/16A 8-Pin WDFN EP T/R |
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FDMC007N30D | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 46A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
Produkt ist nicht verfügbar |