FDMC007N30D onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.35 EUR |
| 100+ | 1 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.72 EUR |
| 3000+ | 0.63 EUR |
| 6000+ | 0.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC007N30D onsemi / Fairchild
Description: MOSFET 2N-CH 30V 46A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 46A, Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Weitere Produktangebote FDMC007N30D nach Preis ab 0.73 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC007N30D | onsemi |
 Description: MOSFET 2N-CH 30V 46A 8PWR33Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V Current - Continuous Drain (Id) @ 25°C: 46A Drain to Source Voltage (Vdss): 30V Power - Max: 1.9W, 2.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 5283 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMC007N30D |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 46A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W, 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 46A 8PWR33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W, 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5283 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 12+ | 1.54 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |