FDMC0310AS-F127-L701 onsemi
Hersteller: onsemi
Description: PT8 NCH 30V/20V S ML
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 14+ | 1.34 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.72 EUR |
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Technische Details FDMC0310AS-F127-L701 onsemi
Description: PT8 NCH 30V/20V S ML, Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 2.4W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMC0310AS-F127-L701
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMC0310AS-F127-L701 | onsemi |
Description: PT8 NCH 30V/20V S ML Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 2.4W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMC0310AS-F127-L701 |
|
Hersteller: onsemi
Description: PT8 NCH 30V/20V S ML
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: PT8 NCH 30V/20V S ML
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH