auf Bestellung 5049 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 676+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
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Technische Details FDMC4435BZ-F127 ON Semiconductor
Description: P-CHANNEL POWER TRENCH MOSFET -3, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.2x3.2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V.
Weitere Produktangebote FDMC4435BZ-F127 nach Preis ab 0.75 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDMC4435BZ-F127 | Hersteller : ON Semiconductor |
 FDMC4435BZ-F127 |
auf Bestellung 18596 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC4435BZ-F127 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 30V 8.5A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC4435BZ-F127 | Hersteller : onsemi |
Description: P-CHANNEL POWER TRENCH MOSFET -3 Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Power Dissipation (Max): 2.3W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.2x3.2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDMC4435BZ-F127 | Hersteller : onsemi / Fairchild |
MOSFETs -30V P-CH PwrTrench |
Produkt ist nicht verfügbar |