FDMC6683 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: 14A, 20V, 0.0084OHM, P-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Bulk
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Technische Details FDMC6683 Fairchild Semiconductor
Description: 14A, 20V, 0.0084OHM, P-CHANNEL P, Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Part Status: Active, Supplier Device Package: 8-MLP (3.3x3.3), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Bulk.
Weitere Produktangebote FDMC6683
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDMC6683 | Hersteller : onsemi / Fairchild |
MOSFET |
Produkt ist nicht verfügbar |