FDMC8200S onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.81 EUR |
| 6000+ | 0.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC8200S onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Weitere Produktangebote FDMC8200S nach Preis ab 0.54 EUR bis 2.97 EUR
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
auf Bestellung 2678 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
auf Bestellung 2678 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8200S | Hersteller : onsemi / Fairchild |
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FDMC8200S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
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