FDMC8200S onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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Technische Details FDMC8200S onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Weitere Produktangebote FDMC8200S nach Preis ab 0.92 EUR bis 3.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDMC8200S | onsemi / Fairchild |
MOSFETs 30V Dual N-Channel PowerTrench MOSFET |
auf Bestellung 7335 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8200S | onsemi |
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A Drain to Source Voltage (Vdss): 30V Power - Max: 700mW, 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 10742 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8200S | ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin WDFN EP T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDMC8200S | ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin WDFN EP T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 35 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FDMC8200S |
FSC 1121+ MLP |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMC8200S |
|
Hersteller: onsemi / Fairchild
MOSFETs 30V Dual N-Channel PowerTrench MOSFET
MOSFETs 30V Dual N-Channel PowerTrench MOSFET
auf Bestellung 7335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.48 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.98 EUR |
| 3000+ | 0.92 EUR |
| FDMC8200S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW, 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 700mW, 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 10742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.53 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.09 EUR |
| FDMC8200S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin WDFN EP T/R
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin WDFN EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMC8200S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin WDFN EP T/R
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin WDFN EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMC8200S |
|
FSC 1121+ MLP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)