FDMC8360L onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC8360L onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: Power33, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 54W (Tc).
Weitere Produktangebote FDMC8360L nach Preis ab 1.5 EUR bis 4.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC8360L | onsemi / Fairchild |
MOSFETs 40V N Chan Shielded Gate Power Trench |
auf Bestellung 3453 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FDMC8360L | onsemi |
Description: MOSFET N-CH 40V 27A/80A POWER33 Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 5740 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMC8360L |
|
Hersteller: onsemi / Fairchild
MOSFETs 40V N Chan Shielded Gate Power Trench
MOSFETs 40V N Chan Shielded Gate Power Trench
auf Bestellung 3453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.84 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.5 EUR |
| FDMC8360L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A/80A POWER33
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 40V 27A/80A POWER33
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5795 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.47 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.56 EUR |