FDMC8462 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.75 EUR |
| 6000+ | 0.7 EUR |
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Technische Details FDMC8462 onsemi
Description: MOSFET N-CH 40V 14A/20A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V, Power Dissipation (Max): 2W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V.
Weitere Produktangebote FDMC8462 nach Preis ab 0.57 EUR bis 3.68 EUR
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FDMC8462 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 14A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8462 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 14A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8462 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 14A/20A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V Power Dissipation (Max): 2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V |
auf Bestellung 12468 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8462 | Hersteller : onsemi / Fairchild |
MOSFETs 40V N-Channel PowerTrench |
auf Bestellung 7338 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8462 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 14A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC8462 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |