FDMC86012 ON Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 103+ | 1.42 EUR |
| 104+ | 1.36 EUR |
| 106+ | 1.28 EUR |
| 250+ | 1.23 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.97 EUR |
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Technische Details FDMC86012 ON Semiconductor
Description: MOSFET N-CH 30V 23A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 23A, 4.5V, Power Dissipation (Max): 2.3W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 15 V.
Weitere Produktangebote FDMC86012 nach Preis ab 0.92 EUR bis 6.11 EUR
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FDMC86012 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86012 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 23A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 23A, 4.5V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86012 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
auf Bestellung 2031 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86012 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
auf Bestellung 525 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86012 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
auf Bestellung 14309 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86012 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86012 | Hersteller : onsemi / Fairchild |
MOSFETs 30V N-Channel PowerTrench MOSFET |
auf Bestellung 3048 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86012 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 23A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 23A, 4.5V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5075 pF @ 15 V |
auf Bestellung 3504 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMC86012 | Hersteller : ON Semiconductor |
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auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC86012 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
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FDMC86012 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
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| FDMC86012 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 88A Pulsed drain current: 230A Power dissipation: 54W Case: Power33 Gate-source voltage: ±12V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC86012 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 88A; Idm: 230A; 54W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 88A Pulsed drain current: 230A Power dissipation: 54W Case: Power33 Gate-source voltage: ±12V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |