FDMC86183 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 47A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
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Technische Details FDMC86183 onsemi
Description: MOSFET N-CH 100V 47A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V.
Weitere Produktangebote FDMC86183 nach Preis ab 1.14 EUR bis 3.56 EUR
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FDMC86183 | onsemi |
Description: MOSFET N-CH 100V 47A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Last Time Buy Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 11956 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86183 | ON Semiconductor / Fairchild |
MOSFET PTNG 100/20V Nch Trench Mosfet |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMC86183 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 47A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Last Time Buy
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 47A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Last Time Buy
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 11956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.56 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.14 EUR |
| FDMC86183 |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET PTNG 100/20V Nch Trench Mosfet
MOSFET PTNG 100/20V Nch Trench Mosfet
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)