FDMC8884_F126 ON Semiconductor

Description: MOSFET N-CH 30V 9A/15A 8MLP, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-MLP (3.3x3.3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 18W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V.