| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 3.72 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.12 EUR |
| 3000+ | 2.02 EUR |
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Technische Details FDMD8440L onsemi
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 33W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power 3.3x5, Part Status: Active.
Weitere Produktangebote FDMD8440L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FDMD8440L | onsemi |
 Description: MOSFET 2N-CH 40V 21A PWR 3.3X5Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power 3.3x5 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FDMD8440L | onsemi |
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power 3.3x5 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMD8440L |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power 3.3x5
Part Status: Active
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power 3.3x5
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMD8440L |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power 3.3x5
Part Status: Active
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power 3.3x5
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH