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FDMD8440L

FDMD8440L onsemi

FDMD8440L_D-2312545.pdf
Hersteller: onsemi
MOSFET FET 40V 87A 2.6 mOhm
auf Bestellung 2490 Stücke:
Lieferzeit 384-388 Tag (e)
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1+3.77 EUR
10+3.13 EUR
100+2.48 EUR
500+2.11 EUR
1000+1.78 EUR
3000+1.7 EUR
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Technische Details FDMD8440L onsemi

Description: MOSFET 2N-CH 40V 21A PWR 3.3X5, Part Status: Active, Supplier Device Package: Power 3.3x5, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2.1W (Ta), 33W (Tc), Technology: MOSFET (Metal Oxide), Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN.

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FDMD8440L FDMD8440L onsemi fdmd8440l-d.pdf Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Part Status: Active
Supplier Device Package: Power 3.3x5
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.1W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMD8440L FDMD8440L onsemi fdmd8440l-d.pdf Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.1W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: Power 3.3x5
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMD8440L fdmd8440l-d.pdf
FDMD8440L
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Part Status: Active
Supplier Device Package: Power 3.3x5
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.1W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMD8440L fdmd8440l-d.pdf
FDMD8440L
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 21A PWR 3.3X5
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.1W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: Power 3.3x5
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH