FDMD8680 onsemi / Fairchild
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.83 EUR |
| 10+ | 7.06 EUR |
| 100+ | 5.78 EUR |
| 500+ | 4.93 EUR |
| 1000+ | 4.14 EUR |
| 3000+ | 3.92 EUR |
| 6000+ | 3.89 EUR |
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Technische Details FDMD8680 onsemi / Fairchild
Description: MOSFET 2 N-CH 80V 66A 8-PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 39W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Active.
Weitere Produktangebote FDMD8680 nach Preis ab 4.4 EUR bis 8.33 EUR
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FDMD8680 | onsemi |
 Description: MOSFET 2 N-CH 80V 66A 8-PQFNGate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drain to Source Voltage (Vdss): 80V Power - Max: 39W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-Power 5x6 Vgs(th) (Max) @ Id: 4V @ 250µA |
auf Bestellung 2169 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMD8680 |
|
Hersteller: onsemi
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 39W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power 5x6
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 39W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power 5x6
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 2169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.33 EUR |
| 10+ | 7.5 EUR |
| 100+ | 6.14 EUR |
| 500+ | 5.22 EUR |
| 1000+ | 4.4 EUR |